Theoretical analysis of the damping effect on a transistor laser
نویسندگان
چکیده
The impact of carrier pulling on the modulation characteristics of a transistor laser is discussed. The results of a theoretical analysis of modulation bandwidth and damping effect show that the carrier transport effect obtained by using a transistor laser allows for a gain compression factor of about one-tenth that of a conventional laser (0.7×1017 cm3), as well as for a maximum modulation bandwidth of 45GHz.
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ورودعنوان ژورنال:
- IEICE Electronic Express
دوره 9 شماره
صفحات -
تاریخ انتشار 2012